型号:

STW25NM60N

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:MOSFET N-CH 600V 21A TO-247
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
STW25NM60N PDF
产品目录绘图 ST Series TO-247
标准包装 1
系列 MDmesh™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 600V
电流 - 连续漏极(Id) @ 25° C 21A
开态Rds(最大)@ Id, Vgs @ 25° C 160 毫欧 @ 10.5A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 84nC @ 10V
输入电容 (Ciss) @ Vds 2400pF @ 50V
功率 - 最大 160W
安装类型 通孔
封装/外壳 TO-247-3
供应商设备封装 TO-247-3
包装 带卷 (TR)
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